开元956棋app下载

EN
您所在位置: 首页 >> 师资队伍 >> 副教授 >> 正文
龙浩

系别:微电子与集成电路系

职称:副教授

邮箱:longhao@xmu.edu.cn

联系方式:0592-2183301

办公地点:厦门大学翔安校区文宣楼C306-3

个人简历:

学历:

北京大学理学学士,物理学专业,2004.09~2008.07

北京大学理学博士,凝聚态物理专业,2008.09~2013.07

美国加州大学洛杉矶分校,国家公派留学联合培养,2012.01 ~ 2012.07


研究方向:

氧化镓、氮化镓等宽禁带半导体

功率半导体电子学器件、半导体光电子学


主讲课程:

固体电子学(本科生课)

半导体光电子学、工程伦理(研究生课)


成果奖励:

1. 入选2022年福建省高层次人才B类(2022)

2. III-V族氮化物材料生长用图形化蓝宝石衬底关键技术与产业化;教育部科技进步国家二等奖(参与人)(2015)

3. 厦门大学刘晓数理奖(2022)


课题项目:

1. 利用碳纳米管制备低阈值UVA-VCSEL及其光学特性的研究,国家自然科学基金(面上)项目,2022.01-2025.12,主持

2. 基于界面低维材料的氮化物衬底剥离及垂直腔面激光器研究,福建省自然科学基金,2019.07-2022.06,主持

3. 无机钙钛矿CsPbX3 CVD外延的研究,厦门市青年创新项目,2020.07-2023.06,主持

4. 利用碳纳米管改善激光剥离工艺及垂直结构LED的研究,国家自然科学基金(青年)项目,2018.01-2020.12,主持

5. 基于谐振腔的窄带日盲紫外探测器, 厦门大开元956棋app下载长基金(优青培育), 2023.01-2025.12,主持

6. 用蒙特卡罗方法在7层皮肤组织模型上模拟皮肤颜色, 横向项目,2022.01-2023.06,主持

7. 纳米图形化(001)Si上生长半极性GaN及其LED器件,博士后基金,2015.11-2017.04,主持


代表作:

[1] Yin, Y.; Chen, R.; He, R.; Duo, Y.; Long, H.*; Hu, W.; Zhai, J.; Pan, C.; Zhang, Z.; Wang, J.; Li, J.; Wei, T. Strain Visualization Enabled in Dual-Wavelength InGaN/GaN Multiple Quantum Wells Micro-LEDs by Piezo-Phototronic Effect. Nano Energy 2023, 109, 108283.

[2] Fan, S.; Yan, T.; Huang, L.; Sang, L.; Mei, Y.; Ying, L.; Zhang, B.; Long, H*. Effect of Stress on Thermal Properties of AlGaN Nanofilms. Semicond. Sci. Technol. 2022, 37 (12), 125006.

[3] Xu, R.; Ma, X.; Chen, Y.; Mei, Y.; Ying, L.; Zhang, B.; Long, H* Effect of Oxygen Vacancies in Heteroepitaxial β-Ga2O3 Thin Film Solar Blind Photodetectors. Materials Science in Semiconductor Processing 2022, 144, 106621.

[4] Huang, L.; Fan, S.; Sang, L.; Mei, Y.; Ying, L.; Zhang, B.; Long, H*Thermal Conductivity and Phonon Scattering of AlGaN Nanofilms by Elastic Theory and Boltzmann Transport Equation. Semicond. Sci. Technol. 2022, 37 (5), 055003.

[5] Ma, X.; Xu, R.; Mei, Y.; Ying, L.; Zhang, B.; Long, H* Crystalline Anisotropy of β-Ga 2 O 3 Thin Films on a c-Plane GaN Template and a Sapphire Substrate. Semicond. Sci. Technol. 2022, 37 (3), 035003.

[6] Bao, C.; Peng, X.; Ying, L.; Mei, Y.; Zhang, B.; Long, H* Investigation of CsPbBr 3 CVD Dynamics at Various Temperatures. Phys. Chem. Chem. Phys. 2021, 10.1039.D1CP03794C.

[7] Ma, X.; Xu, R.; Xu, J.; Ying, L.; Mei, Y.; Long, H*; Zhang, B. In-Plane Crystalline Anisotropy of Bulk β-Ga 2 O 3. J Appl Crystallogr 2021, 54 (4), 1153–1157.

[8] Tian, M. F.; Huang, L. H.; Mei, Y.; Xu, R. B.; Zheng, Z. M.; Su, X. L.; Long, H*; Ying, L. Y.; Zhang, B. P.; Wang, K.; Yu, T. J. Effect of Carbon Nanotube Pattern on the Laser Lift off and Quantum Efficiencies of near UV Vertical LEDs. Journal of Luminescence 2021, 234, 117938.

[9] Zheng, Z.; Mei, Y.; Long, H*; Hoo, J.; Guo, S.; Li, Q.; Ying, L.; Zheng, Z.; Zhang, B. AlGaN-Based Deep Ultraviolet Vertical-Cavity Surface-Emitting Laser. IEEE Electron Device Lett. 2021, 42 (3), 375–378.

[10] Tian, M. F.; Feng, X. J.;Long, H*; Ying, L. Y.; Zhang, B. P.; Wang, K.; Yu, T. J. Impact of Carbon Nanotube Pattern Layers on Gallium Nitride-Based Light Emitting Diodes. Semicond. Sci. Technol. 2020, 35 (11), 115013.

[11] Long, H*; Peng, X.; Lu, J.; Lin, K.; Xie, L.; Zhang, B.; Ying, L.; Wei, Z. Exciton–Phonon Interaction in Quasi-Two Dimensional Layered (PEA) 2 (CsPbBr 3 ) n?1 PbBr 4 Perovskite. Nanoscale 2019, 11 (45), 21867–21871.

[12] Long, H*; Peng, X.; Lin, K.; Xie, L.; Lu, J.; Zhang, B.; Ying, L.; Wei, Z. Acoustic Phonon–Exciton Interaction by Extremely Strong Exciton Confinement and Large Phonon Energy in CsPbBr 3 Perovskite. Applied Physics Express 2019, 12 (5), 052003.

[13] Shi, X.;Long, H*; Wu, J.; Chen, L.; Ying, L.; Zheng, Z.; Zhang, B. Theoretical Optimization of Inhomogeneous Broadening in InGaN/GaN MQWs to Polariton Splitting at Low Temperature. Superlattices and Microstructures 2019, 128, 151–156.

[14] Wu, J.; Long, H*; Shi, X.; Luo, S.; Chen, Z.; Feng, Z.; Ying, L.; Zheng, Z.; Zhang, B. Polariton Lasing in InGaN Quantum Wells at Room Temperature. Opto-Electronic Advances 2019, 2 (12), 19001401–19001405.

[15] Wu, J.-Z.; Long, H*; Shi, X.-L.; Ying, L.-Y.; Zheng, Z.-W.; Zhang, B.-P. Reduction of Lasing Threshold of GaN-Based Vertical-Cavity Surface-Emitting Lasers by Using Short Cavity Lengths. IEEE Transactions on Electron Devices 2018, 65 (6), 2504–2508.

[16] Long, H; Feng, X.; Wei, Y.; Yu, T.; Fan, S.; Ying, L.; Zhang, B. Carbon Nanotube Assisted Lift off of GaN Layers on Sapphire. Applied Surface Science 2017, 394, 598–603.

[17] Long, H; Wei, Y.; Yu, T.; Wang, Z.; Jia, C.; Yang, Z.; Zhang, G.; Fan, S. Modulating Lateral Strain in GaN-Based Epitaxial Layers by Patterning Sapphire Substrates with Aligned Carbon Nanotube Films. Nano Res. 2012, 5 (9), 646–653.

[18] Long, H; Yu, T. J.; Fang, H.; Yang, Z. J.; Zhang, G. Y. Modulation of Anisotropic Crystalline in A-Plane GaN on HT-AlN Buffer Layer. Applied Surface Science 2012, 258 (15), 5579–5582.

[19] Long, H; Yu, T. J.; Liu, L.; Yang, Z. J.; Fang, H.; Zhang, G. Y. Different Exciton Behaviors in Blue and Green Wells of Dual-Wavelength InGaN/GaN MQWs Structures. Journal of Applied Physics 2012, 111 (5), 053110.

[20] Long, H; Wei, Y.; Yu, T.; Wang, Z.; Jia, C.; Yang, Z.; Zhang, G.; Fan, S. High Quality GaN Epilayers Grown on Carbon Nanotube Patterned Sapphire Substrate by Metal–Organic Vapor Phase Epitaxy. CrystEngComm 2012, 14 (14), 4728.





【开元956棋app下载】 - 电子有限公司
Top